Semiconductor ESD device and method of making same

US8471292B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Krzysztof Domanski · Munich, DE
• Cornelius Christian Russ · Diedorf, DE
• Kai Esmark · Schwanau, DE

Key dates

• Filing date: May 4, 2012
• Grant date: Jun 25, 2013
• Expiry date: May 4, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/13034

Abstract

A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity type is opposite the first conductivity type. Also included is a plurality of third device regions having a sub-region of the first conductivity type and a sub-region of the second conductivity type disposed on the second device region. The first regions and second regions are distributed such that the third regions are not directly adjacent to each other. A fourth device region of the first conductivity type adjacent to the second device region and a fifth device region of the second conductivity type disposed within the fourth device region are also included.