Methodology for implementing enhanced optical lithography for hole patterning in semiconductor fabrication
US8472005B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Feb 22, 2007 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Jan 20, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/701
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
System and method for enhancing optical lithography methodology for hole patterning in semiconductor fabrication are described. In one embodiment, a photolithography system comprises an illumination system for conditioning light from a light source, the illumination system producing a three-pore illumination pattern; a reticle comprising at least a portion of a pattern to be imaged onto a substrate, wherein the three-pore illumination pattern produced by the illumination system is projected through the reticle; and a projection lens disposed between the reticle and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.