Patent · US Active

Stacked semiconductor chip device with thermal management

US8472190B2 · kind B2 · utility

14Cited by
7References
24Claims
0Family size

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Key dates

Filing dateSep 24, 2010
Grant dateJun 25, 2013
Priority date
Expiry dateJun 11, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH05K2201/1056
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of manufacturing is provided that includes placing a thermal management device in thermal contact with a first semiconductor chip of a semiconductor chip device. The semiconductor chip device includes a first substrate coupled to the first semiconductor chip. The first substrate has a first aperture. At least one of the first semiconductor chip and the thermal management device is at least partially positioned in the first aperture.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.