Method and system for forming high accuracy patterns using charged particle beam lithography
US8473875B2 · kind B2 · utility
30Cited by
5References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 25, 2011 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Jun 25, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for fracturing or mask data preparation for charged particle beam lithography are disclosed in which accuracy and/or edge slope of a pattern formed on a surface by a set of charged particle beam shots is enhanced by use of partially-overlapping shots. In some embodiments, dosages of the shots may vary with respect to each other before proximity effect correction. Particle beam simulation may be used to calculate the pattern and the edge slope. Enhanced edge slope can improve critical dimension (CD) variation and line-edge roughness (LER) of the pattern produced on the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.