Patent · US Active

Method for producing a single crystal of semiconductor material

US8475592B2 · kind B2 · utility

0Cited by

5References

6Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Wilfried Ammon · Burghausen, DE
Ludwig Altmannshofer · Lenggries, DE
Helge Riemann · Königs Wusterhausen, DE
Joerg Fischer · Laboe, DE

Key dates

Filing date	Aug 11, 2009
Grant date	Jul 2, 2013
Priority date	—
Expiry date	Feb 21, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T117/1092
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.