Ludwig Altmannshofer
11Patents
1h-index
16Co-inventors
47Inventor score
Filing activity: Jul 23, 2002 → Jun 4, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6840998B2 | Silicon single crystal produced by crucible-free float zone pulling | Emerging Cross-Sectional Technologies | 3 | Expired |
| US8454746B2 | Method for producing a single crystal composed of silicon using molten granules | Emerging Cross-Sectional Technologies | 0 | Active |
| US9932690B2 | Device for producing a monocrystal by crystallizing said monocrystal in a melting area | Emerging Cross-Sectional Technologies | 0 | Active |
| US8580033B2 | Method for producing a single crystal of semiconductor material | Emerging Cross-Sectional Technologies | 0 | Active |
| US8475592B2 | Method for producing a single crystal of semiconductor material | Emerging Cross-Sectional Technologies | 0 | Active |
| US9084296B2 | Induction heating coil and method for melting granules composed of semiconductor material | Electricity | 0 | Active |
| US7011704B2 | Method and device for the production of a single crystal | Emerging Cross-Sectional Technologies | 0 | Expired |
| US11788201B2 | Method for producing a single crystal from semiconductor material by the FZ method; device for carrying out the method and semiconductor silicon wafer | Electricity | 0 | Active |
| US9932691B2 | Method for growing a single crystal by crystallizing the single crystal from a float zone | Chemistry; Metallurgy | 0 | Active |
| US9422634B2 | Method and apparatus for producing a single crystal | Emerging Cross-Sectional Technologies | 0 | Active |
| US8834627B2 | Method for producing a single crystal composed of silicon by remelting granules | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.