Methods of forming a semiconductor device
US8476150B2 · kind B2 · utility
5Cited by
3References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2010 |
| Grant date | Jul 2, 2013 |
| Priority date | — |
| Expiry date | Apr 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/3732
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structure for a semiconductor device, the device including a handle wafer, a diamond layer formed directly on a front side of the handle wafer, and a thick oxide layer formed directly on a back side of the handle wafer, the oxide of a thickness to counteract tensile stresses of the diamond layer. Nitride layers are formed on the outer surfaces of the diamond layer and thick oxide layer and a polysilicon is formed on outer surfaces of the nitride layers. A device wafer is bonded to the handle wafer to form the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.