Organometallic precursors for use in chemical phase deposition processes
US8476467B2 · kind B2 · utility
1Cited by
7References
9Claims
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Key dates
| Filing date | Jul 24, 2008 |
| Grant date | Jul 2, 2013 |
| Priority date | — |
| Expiry date | Dec 9, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An organometallic precursor is provided. The precursor corresponds in structure to Formula I:Cp(R)nM(CO)2(X) (Formula I)wherein: M is Ru, Fe or Os; R is C1-C10-alkyl; X is C1-C10-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.