Surge-current-resistant semiconductor diode with soft recovery behavior and methods for producing a semiconductor diode

US8476712B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Roman Baburske · Otterfing, DE
• Josef Lutz · Rohrau, AT
• Ralf Siemieniec · Villach, AT
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: Sep 30, 2010
• Grant date: Jul 2, 2013
• Expiry date: Sep 30, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter efficiency is low at small current densities and sufficiently high at large current densities, and an optional cathode structure, which can inject additional holes during commutation, and production methods therefor.