Patent · US Active

Non-uniform switching based non-volatile magnetic based memory

US8477530B2 · kind B2 · utility

40Cited by

0References

24Claims

0Family size

Assignee

Avalanche Technology, Inc. · US

Inventors

Rajiv Yadav Ranjan · San Jose, US
Petro Estakhri · Danville, US
Mahmud Assar · Capitola, US
Parviz Keshtbod · Los Altos Hills, US

Key dates

Filing date	Nov 28, 2011
Grant date	Jul 2, 2013
Priority date	—
Expiry date	Jan 3, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/10
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.