Patent · US Active

Semiconductor component and method of making the same

US8478559B2 · kind B2 · utility

1Cited by

4References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Patrick Baginski · Oelde, DE
Reinhold Bayerer · Warstein, DE
Holger Ruething · Munich, DE
Daniel Domes · Schwäbisch Hall, DE

Key dates

Filing date	Mar 19, 2012
Grant date	Jul 2, 2013
Priority date	—
Expiry date	Mar 19, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/311
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

One embodiment provides a semiconductor chip including a semiconductor body and a power semiconductor component integrated therein. The power semiconductor component includes a load electrode zone arranged on a first surface of the semiconductor body, a control electrode zone arranged on the first surface, the control electrode zone being electrically insulated from the load electrode zone, and a resistance track arranged on the load electrode zone and the control electrode zone. The resistance track ensures an electrical connection between the load electrode zone and the control electrode zone.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.