Patent · US Active

Assessing metal stack integrity in sophisticated semiconductor devices by mechanically stressing die contacts

US8479578B2 · kind B2 · utility

4Cited by
5References
28Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 4, 2010
Grant dateJul 9, 2013
Priority date
Expiry dateNov 4, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/35
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The metallization system of complex semiconductor devices may be evaluated in terms of mechanical integrity on the basis of a measurement system and measurement procedures in which individual contact elements, such as metal pillars or solder bumps, are mechanically stimulated, while the response of the metallization system, for instance in the form of directly measured forces, is determined in order to quantitatively evaluate mechanical status of the metallization system. In this manner, the complex material systems and the mutual interactions thereof may be efficiently assessed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.