Plasma processing method and apparatus with control of plasma excitation power
US8480913B2 · kind B2 · utility
1Cited by
9References
50Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 30, 2011 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Jun 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3299
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The amount of RF power supplied to a plasma in a vacuum plasma processing chamber is gradually changed on a preprogrammed basis in response to signals stored in a computer memory. The computer memory stores signals so that other processing chamber parameters (pressure, gas species and gas flow rates) remain constant while the gradual change occurs. The stored signals enable rounded corners, instead of sharp edges, to be etched, e.g., at an intersection of a trench wall and base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.