Methods of forming thin metal-containing films by chemical phase deposition
US8481121B2 · kind B2 · utility
1Cited by
7References
29Claims
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Key dates
| Filing date | Jul 24, 2008 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Sep 6, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45525
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C10-alkyl; X is C1-C10-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.