Epitaxial film growth in retrograde wells for semiconductor devices
US8481341B2 · kind B2 · utility
22Cited by
2References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 4, 2012 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Jun 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device. A substrate is provided and includes a dielectric layer and a mask layer, which is patterned and developed. A plurality of trenches is created within the dielectric material by a retrograde etching process. The plurality of trenches is subsequently overfilled with a material by heteroepitaxial growth with aspect ratio trapping. The material includes at least one of germanium, a Group III-V compound, or a combination of two or more thereof. The overfilled plurality of trenches is then planarized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.