Method for producing MIM capacitors with high K dielectric materials and non-noble electrodes

US8481384B2 · kind B2 · utility

Assignees

• INTERMOLECULAR, INC. · US
• ELPIDA MEMORY, INC. · JP

Inventors

• Hanhong Chen · Milpitas, US
• Pragati Kumar · Santa Clara, US

Key dates

• Filing date: Feb 23, 2011
• Grant date: Jul 9, 2013
• Expiry date: Aug 19, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/68

Abstract

A method of producing a Metal-Insulator-Metal (MIM) capacitor stack through doping to achieve low current leakage and low equivalent oxide thickness is disclosed. A high K dielectric material is deposited on a non-noble electrode; the dielectric material is doped with oxides from group IIA. The dopant increases the barrier height of metal/insulator interface and neutralizes free electrons in dielectric material, therefore reduces the leakage current of MIM capacitor. The electrode may also be doped to increase work function while maintaining a rutile crystalline structure. The method thereby enhances the performance of DRAM MIM capacitor.