Inventor · Santa Clara, CA, US

Pragati Kumar

54Patents
9h-index
19Co-inventors
71Inventor score

Filing activity: Apr 21, 1999 → May 26, 2015

Most-cited inventions

PatentTitleAreaCited byStatus
US8144498B2 Resistive-switching nonvolatile memory elements Physics 101 Active
US8143092B2 Methods for forming resistive switching memory elements by heating deposited layers Electricity 88 Active
US8294219B2 Nonvolatile memory element including resistive switching metal oxide layers Electricity 31 Active
US8129704B2 Non-volatile resistive-switching memories Electricity 14 Active
US7863087B1 Methods for forming resistive-switching metal oxides for nonvolatile memory elements Electricity 13 Active
US8318572B1 Inexpensive electrode materials to facilitate rutile phase titanium oxide Electricity 12 Active
US8053364B2 Closed-loop sputtering controlled to enhance electrical characteristics in deposited layer Electricity 12 Active
US8008096B2 ALD processing techniques for forming non-volatile resistive-switching memories Electricity 11 Active
US8415657B2 Enhanced work function layer supporting growth of rutile phase titanium oxide Electricity 9 Active
US8551809B2 Reduction of forming voltage in semiconductor devices Electricity 9 Active
US6407022B1 Method for fabricating shaped monolithic ceramics Emerging Cross-Sectional Technologies 8 Expired
US8278735B2 Yttrium and titanium high-k dielectric films Electricity 6 Active
US8354702B1 Inexpensive electrode materials to facilitate rutile phase titanium oxide Electricity 5 Active
US7968452B2 Titanium-based high-K dielectric films Emerging Cross-Sectional Technologies 5 Active
US9362497B2 Reduction of forming voltage in semiconductor devices Electricity 5 Active
US7977153B2 Methods for forming resistive-switching metal oxides for nonvolatile memory elements Electricity 4 Active
US8828821B2 Fabrication of semiconductor stacks with ruthenium-based materials Electricity 4 Active
US8737036B2 Titanium based high-K dielectric films Emerging Cross-Sectional Technologies 3 Active
US8963117B2 Reduction of forming voltage in semiconductor devices Electricity 3 Active
US9070867B2 Non-volatile resistive-switching memories Electricity 3 Active
US8481384B2 Method for producing MIM capacitors with high K dielectric materials and non-noble electrodes Electricity 3 Active
US8873276B2 Resistive-switching nonvolatile memory elements Physics 3 Active
US8921156B2 Non-volatile resistive-switching memories Electricity 3 Active
US8367463B2 Methods for forming resistive-switching metal oxides for nonvolatile memory elements Electricity 3 Active
US8574956B2 Method of forming non-volatile resistive-switching memories Electricity 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.