Patent · US Active

Leakage control in field effect transistors based on an implantation species introduced locally at the STI edge

US8481404B2 · kind B2 · utility

2Cited by

5References

20Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Thorsten Kammler · Radeberg, DE
Maciej Wiatr · Dresden, DE
Roman Boschke · Dresden, DE
Peter Javorka · Radebeul, DE

Key dates

Filing date	Jul 19, 2010
Grant date	Jul 9, 2013
Priority date	—
Expiry date	Mar 23, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76237
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a static memory cell, the failure rate upon forming contact elements connecting an active region with a gate electrode structure formed above an isolation region may be significantly reduced by incorporating an implantation species at a tip portion of the active region through a sidewall of the isolation trench prior to filling the same with an insulating material. The implantation species may represent a P-type dopant species and/or an inert species for significantly modifying the material characteristics at the tip portion of the active region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.