Incorporating impurities using a discontinuous mask
US8481414B2 · kind B2 · utility
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10References
28Claims
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Key dates
| Filing date | Apr 8, 2011 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Apr 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/681
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of incorporating impurities into materials can be useful in non-volatile memory devices as well as other integrated circuit devices. Various embodiments provide for incorporating impurities into a material using a discontinuous mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.