High voltage semiconductor device

US8482063B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• An-Hung Lin · Taipei, TW
• Hong-Ze Lin · Hsinchu, TW
• Bo-Jui Huang · Hsinchu, TW
• Wei-Shan Liao · Yuanchang, TW
• Ting-Zhou Yan
• Wei-Chun Chang · Fujian, CN
• Chun-Yao Lee
• Kun-Yi Chou · New Taipei, TW

Key dates

• Filing date: Nov 18, 2011
• Grant date: Jul 9, 2013
• Expiry date: Nov 18, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A high voltage semiconductor device is provided. A first-polarity buried layer is formed in the substrate. A first high voltage second-polarity well region is located over the first-polarity buried layer. A second-polarity base region is disposed within the first high voltage second-polarity well region. A source region is disposed within the second-polarity base region. A high voltage deep first-polarity well region is located over the first-polarity buried layer and closely around the first high voltage second-polarity well region. A first-polarity drift region is disposed within the high voltage deep first-polarity well region. A gate structure is disposed over the substrate. A second high voltage second-polarity well region is located over the first-polarity buried layer and closely around the high voltage deep first-polarity well region. A deep first-polarity well region is located over the first-polarity buried layer and closely around the second high voltage second-polarity well region.