Patent · US Active

Pressure transducer utilizing non-lead containing frit

US8482372B2 · kind B2 · utility

27Cited by
7References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 23, 2012
Grant dateJul 9, 2013
Priority date
Expiry dateApr 23, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T156/10
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A piezoresistive sensor device and method for making the same are disclosed. The device comprises a silicon wafer having piezoresistive elements and contacts in electrical communication with the elements. The device further comprises a contact glass coupled to the silicon wafer and having apertures aligned with the contacts. The device also comprises a non-conductive frit for mounting the contact glass to a header glass, and a conductive non-lead glass frit disposed in the apertures and in electrical communication with the contacts. The method for making the device comprises bonding a contact glass to a silicon wafer such that apertures in the glass line up with contacts on the wafer, and filling the apertures with a non-lead glass frit such that the frit is in electrical communication with the contacts. The use of a lead free glass frit prevents catastrophic failure of the device in ultra high temperature applications.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.