Substrate reactor with adjustable injectors for mixing gases within reaction chamber
US8486191B2 · kind B2 · utility
17Cited by
139References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2009 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Jan 27, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45563
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and apparatuses for separately injecting gases into a reactor for a substrate processing system. The flow profiles of the gases are controlled with two or more sets of adjustable gas flow injectors. The methods are particularly useful for selective deposition of gases in a CVD system using volatile combinations of precursors and etchants. In either case, the gases are provided along separate flow paths that intersect in a relatively open reaction space, rather than in more confined upstream locations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.