Ultrasonic cleaning method and apparatus

US8486199B2 · kind B2 · utility

Assignees

• Lam Research Corporation · US
• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Frank Holsteyns · Steenokkerzeel, BE
• Alexander R. Lippert · Dallas, US
• Christian Degel · Blieskastel, DE
• Anette Jakob · Sankt Wendel, DE
• Franz Josef Becker · Bensberg, DE

Key dates

• Filing date: Jul 22, 2011
• Grant date: Jul 16, 2013
• Expiry date: Jul 22, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02052
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A device and method for treating the surface of a semiconductor wafer provides a treatment fluid in the form of a dispersion of gas bubbles in a treatment liquid generated at acoustic pressures less than those required to induce cavitation in the treatment liquid. A resonator supplies ultrasonic or megasonic energy to the treatment fluid and is configured to create an interference pattern in the treatment fluid comprising regions of pressure amplitude minima and maxima at an interface of the treatment fluid and the semiconductor wafer.