Etching apparatus, analysis apparatus, etching treatment method, and etching treatment program
US8486290B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2009 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Nov 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/0037
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
There is provided an etching apparatus in which, without setting the information of the substance and the chemical reaction, a small number of representative wavelengths can be selected from a waveform at a lot of wavelengths, and an analysis process of etching data which needs large man-hours can be eliminated to efficiently set the monitoring of the etching. The etching apparatus includes: a lot/wafer/step-depending OES-data searching/acquiring function 511 for acquiring a plurality of optical emission intensity waveforms along an etching-treatment time axis; a waveform-change-existence judgment function 521 for judging the existence of the change of the plurality of light emission intensity waveforms; a waveform-correlation-matrix calculating function 522 for calculating a correlation matrix between the optical emission intensity waveforms; a waveform classifying function 523 for classifying the optical emission intensity waveforms into groups; and a representative-waveform selecting function 524 for selecting a representative optical emission intensity waveform from the group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.