Doped electrode for dram applications

US8486780B2 · kind B2 · utility

Assignees

• INTERMOLECULAR, INC. · US
• ELPIDA MEMORY, INC. · JP

Inventors

• Xiangxin Rui · Campbell, US
• Hiroyuki Ode · Kure, JP

Key dates

• Filing date: Aug 29, 2011
• Grant date: Jul 16, 2013
• Expiry date: Aug 29, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/692

Abstract

A metal oxide first electrode layer for a MIM DRAM capacitor is formed wherein the first and/or second electrode layers contain one or more dopants up to a total doping concentration that will not prevent the electrode layers from crystallizing during a subsequent anneal step. One or more of the dopants has a work function greater than about 5.0 eV. One or more of the dopants has a resistivity less than about 1000 μΩ cm. Advantageously, the electrode layers are conductive molybdenum oxide.