Flash memory devices and methods for fabricating the same

US8486782B2 · kind B2 · utility

Assignee

• Spansion LLC. · US

Inventors

• Ning Cheng · San Jose, US
• Fred Cheung · San Jose, US
• Ashot Melik-Martirosian · San Diego, US
• Kyunghoon Min · Palo Alto, US
• Michael Brennan · Campbell, US
• Hiroyuki Kinoshita · San Jose, US

Key dates

• Filing date: Dec 22, 2006
• Grant date: Jul 16, 2013
• Expiry date: Sep 23, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B69/00

Abstract

Flash memory devices and methods for fabricating the same are provided. In accordance with an exemplary embodiment of the invention, a method for fabricating a memory device comprises the steps of fabricating a first gate stack and a second gate stack overlying a substrate. A trench is etched into the substrate between the first gate stack and the second gate stack and a first impurity doped region is formed within the substrate underlying the trench. The trench is filled at least partially with a conductive material.