Semiconductor device having through electrodes protruding from dielectric layer
US8487445B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2010 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Oct 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a manufacturing method thereof are provided. In one embodiment of the manufacturing method of the semiconductor device, a through electrode is formed on a semiconductor die, and a dielectric layer such as a photopolymer is coated on the through electrode to cover the through electrode. Under exposure is performed on the dielectric layer, thereby partially removing the dielectric layer by development. As a result, a top end of the through electrode is exposed to the outside or protrudes through the dielectric layer. The dielectric layer remaining on the top end of the through electrode may be removed by performing a plasma descum process, if needed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.