Spin injection layer robustness for microwave assisted magnetic recording

US8488373B2 · kind B2 · utility

Assignees

• TDK CORPORATION · JP
• Kabushiki Kaisha Toshiba · JP

Inventors

• Kunliang Zhang · Fremont, US
• Min Li · Dublin, US
• Yuchen Zhou · San Jose, US
• Soichi Oikawa · Hachioji, JP
• Hitoshi Iwasaki · Tokyo, JP
• Kenichiro Yamada · Tokyo, JP
• Katsuhiko Koui · Yokohama, JP

Key dates

• Filing date: Oct 3, 2011
• Grant date: Jul 16, 2013
• Expiry date: Nov 4, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/1114
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe(100-V)CoV where v is from 5 to 100 atomic % formed between the SIL and non-magnetic spacer is disclosed. A composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture is used to enhance perpendicular magnetic anisotropy (PMA) in the STO device. The interfacial layer quenches SIL oscillations and thereby stabilizes the SIL against FGL oscillations. The interfacial layer preferably has a thickness from 5 to 50 Angstroms and enhances amplitude (dR/R) in the STO device. The STO device may have a top SIL or bottom SIL configuration. The SIL is typically a laminated structure such as (Co/Ni)X where x is between 5 and 50.