Min Li
203Patents
24h-index
102Co-inventors
93Inventor score
Filing activity: Jan 30, 1989 → Oct 30, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7449345B2 | Capping structure for enhancing dR/R of the MTJ device | Electricity | 133 | Expired |
| US6773515B2 | FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures | Emerging Cross-Sectional Technologies | 111 | Expired |
| US7262941B2 | FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures | Emerging Cross-Sectional Technologies | 104 | Expired |
| US8064244B2 | Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications | Emerging Cross-Sectional Technologies | 92 | Active |
| US6466418B1 | Bottom spin valves with continuous spacer exchange (or hard) bias | Emerging Cross-Sectional Technologies | 90 | Expired |
| US6998150B2 | Method of adjusting CoFe free layer magnetostriction | Emerging Cross-Sectional Technologies | 72 | Expired |
| US7602033B2 | Low resistance tunneling magnetoresistive sensor with composite inner pinned layer | Electricity | 71 | Active |
| US8274811B2 | Assisting FGL oscillations with perpendicular anisotropy for MAMR | Emerging Cross-Sectional Technologies | 55 | Active |
| US7978442B2 | CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer | Emerging Cross-Sectional Technologies | 48 | Active |
| US7390529B2 | Free layer for CPP GMR having iron rich NiFe | Emerging Cross-Sectional Technologies | 43 | Expired |
| US8184411B2 | MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application | Emerging Cross-Sectional Technologies | 40 | Active |
| US8208219B2 | Modified field generation layer for microwave assisted magnetic recording | Physics | 39 | Active |
| US7331100B2 | Process of manufacturing a seed/AFM combination for a CPP GMR device | Emerging Cross-Sectional Technologies | 32 | Expired |
| US8305711B2 | Process of octagonal pole for microwave assisted magnetic recording (MAMR) writer | Physics | 32 | Active |
| US8824106B1 | Two sensor reader for hard disk drive (HDD) | Physics | 31 | Active |
| US7382589B2 | CPP with elongated pinned layer | Physics | 31 | Expired |
| US7477491B2 | GMR device having an improved free layer | Emerging Cross-Sectional Technologies | 30 | Active |
| US7528457B2 | Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R | Electricity | 30 | Active |
| US8059374B2 | TMR device with novel free layer structure | Electricity | 30 | Active |
| US6729014B2 | Magnetic assist read track-width definition for a lead overlay top spin-valve GMR head | Emerging Cross-Sectional Technologies | 27 | Expired |
| US7476954B2 | TMR device with Hf based seed layer | Emerging Cross-Sectional Technologies | 27 | Active |
| US7180712B1 | Shield structure design to improve the stability of an MR head | Electricity | 26 | Expired |
| US6522507B1 | Single top spin valve heads for ultra-high recording density | Emerging Cross-Sectional Technologies | 25 | Expired |
| US7333306B2 | Magnetoresistive spin valve sensor with tri-layer free layer | Emerging Cross-Sectional Technologies | 24 | Active |
| US8300356B2 | CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording | Emerging Cross-Sectional Technologies | 24 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.