UV assisted silylation for recovery and pore sealing of damaged low K films
US8492170B2 · kind B2 · utility
506Cited by
10References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2011 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Aug 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02348
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.