Methods for quantitative measurement of a plasma immersion process
US8492177B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2011 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Jan 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for quantitatively measuring the performance of a plasma immersion process are provided herein. In some embodiments, a method of quantitatively measuring the performance of a plasma immersion process, using a first substrate comprising an oxide layer deposited atop a silicon layer, may include subjecting the first substrate to a plasma immersion process in a first plasma immersion chamber to form a doped oxide layer atop the first substrate; and determining a thickness of the doped oxide layer by shining a beam of light upon a reflective surface of the doped oxide layer; detecting reflected beams of light off of the reflective surface of the doped oxide layer; and analyzing the reflected beams of light to determine the thickness of the doped oxide layer on the first substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.