Patent · US Active

Method of monitoring fabrication processing including edge bead removal processing

US8492178B2 · kind B2 · utility

7Cited by
3References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 25, 2008
Grant dateJul 23, 2013
Priority date
Expiry dateAug 29, 2029

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06T2207/30148
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Systems and method for monitoring semiconductor wafer fabrication processing, for example based upon EBR line inspection, including capturing at least one image of a wafer at an intermediate stage of fabrication. The captured image(s) are compressed to generate a composite representation of at least an edge zone of the wafer. An edge bead removal area is identified in the representation, and at least one feature attribute is extracted from the identified area. The extracted feature attribute is automatically assessed, and information relating to a status of the fabrication processing in generated based upon the assessment. For example, recommended modifications to the fabrication processing, either upstream or downstream of the current stage of fabrication (or both) can be generated and implemented.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.