Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
US8492185B1 · kind B1 · utility
38Cited by
53References
20Claims
0Family size
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Key dates
| Filing date | Jul 13, 2012 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Jul 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating large-area nonpolar or semipolar GaN wafers with high quality, low stacking fault density, and relatively low dislocation density is described. The wafers are useful as seed crystals for subsequent bulk growth or as substrates for LEDs and laser diodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.