Vertically stacked FETs with series bipolar junction transistor

US8492220B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Karl R. Erickson · Rochester, US
• Phil C. Paone · Rochester, US
• David P. Paulsen · Dodge Center, US
• John E. Sheets, II · Zumbrota, US
• Kelly L. Williams · Rochester, US

Key dates

• Filing date: Aug 9, 2010
• Grant date: Jul 23, 2013
• Expiry date: Jul 29, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/401

Abstract

Vertically stacked Field Effect Transistors (FETs) are created on a vertical structure formed on a semiconductor substrate where a first FET and a second FET are controllable independently. A bipolar junction transistor is connected between and in series with the first FET and the second FET, the bipolar junction transistor may be controllable independently of the first and second FET.