Step-like spacer profile
US8492236B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2012 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Jan 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
Abstract
Interlayer dielectric gap fill processes are enhanced by forming gate spacers with a step-like or tapered profile. Embodiments include forming a gate electrode on a substrate, depositing a spacer material over the gate electrode, etching the spacer material to form a first spacer on each side of the gate electrode, and pulling back the first spacers to form second spacers which have a step-like profile. Embodiments further include depositing a second spacer material over the gate electrode and the second spacers, and etching the second spacer material to form a third spacer on each second spacer, the second and third spacers forming an outwardly tapered composite spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.