Hai Cong
28Patents
6h-index
47Co-inventors
65Inventor score
Filing activity: Jan 29, 2004 → Jul 5, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7247555B2 | Method to control dual damascene trench etch profile and trench depth uniformity | Electricity | 9 | Expired |
| US8518775B2 | Integration of eNVM, RMG, and HKMG modules | Electricity | 9 | Active |
| US8058123B2 | Integrated circuit and method of fabrication thereof | Electricity | 7 | Active |
| US7892900B2 | Integrated circuit system employing sacrificial spacers | Electricity | 7 | Active |
| US9972775B2 | Integrated magnetic random access memory with logic device having low-k interconnects | Electricity | 6 | Active |
| US7879732B2 | Thin film etching method and semiconductor device fabrication using same | Electricity | 6 | Active |
| US7745320B2 | Method for reducing silicide defects in integrated circuits | Electricity | 5 | Active |
| US10446607B2 | Integrated two-terminal device with logic device for embedded application | Electricity | 4 | Active |
| US8987134B2 | Reliable interconnect for semiconductor device | Electricity | 4 | Active |
| US10461247B2 | Integrated magnetic random access memory with logic device having low-K interconnects | Electricity | 4 | Active |
| US10608046B2 | Integrated two-terminal device with logic device for embedded application | Electricity | 2 | Active |
| US8940637B2 | Method for forming through silicon via with wafer backside protection | Electricity | 2 | Active |
| US8293545B2 | Critical dimension for trench and vias | Electricity | 1 | Active |
| US8546873B2 | Integrated circuit and method of fabrication thereof | Electricity | 1 | Active |
| US9564575B2 | Dual encapsulation integration scheme for fabricating integrated circuits with magnetic random access memory structures | Electricity | 1 | Active |
| US8737061B2 | Heat dissipating apparatus | Physics | 1 | Active |
| US9520299B2 | Etch bias control | Electricity | 0 | Active |
| US8828858B2 | Spacer profile engineering using films with continuously increased etch rate from inner to outer surface | Electricity | 0 | Active |
| US8836139B2 | CD control | Electricity | 0 | Active |
| US10103097B2 | CD control | Electricity | 0 | Active |
| US8492236B1 | Step-like spacer profile | Electricity | 0 | Active |
| US8394724B2 | Processing with reduced line end shortening ratio | Electricity | 0 | Active |
| US7960283B2 | Method for reducing silicide defects in integrated circuits | Electricity | 0 | Active |
| US9437550B2 | TSV without zero alignment marks | Electricity | 0 | Active |
| US10115625B2 | Methods for removal of hard mask | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.