Methods of fabricating a bipolar junction transistor with a self-aligned emitter and base
US8492237B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Mar 8, 2011 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | May 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating bipolar junction transistors with self-aligned emitter and extrinsic base, bipolar junction transistors made by the methods, and design structures for a BiCMOS integrated circuit. The bipolar junction transistor is fabricated using a sacrificial emitter pedestal that provides a sacrificial mandrel promoting self-alignment between the emitter and the extrinsic base. The sacrificial emitter pedestal is subsequently removed to open an emitter window extending to the intrinsic base. An emitter is formed in the emitter window that lands on the intrinsic base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.