Homogeneous porous low dielectric constant materials
US8492239B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2012 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Sep 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one first process on the structure; after performing the at least one first process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material; and after removing the filling material from the plurality of pores, performing at least one second process on the structure, where the at least one second process is performed at a third temperature that is greater than the second temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.