Patent · US Active

Method for the production of a semiconductor structure

US8492243B2 · kind B2 · utility

3Cited by

10References

15Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Maik Haeberlen · Burghausen, DE
Brian Murphy · Pfarrkirchen, DE

Key dates

Filing date	Jan 21, 2009
Grant date	Jul 23, 2013
Priority date	—
Expiry date	Oct 25, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/841
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Semiconductor structures are produced by providing a 3C—SiC semiconductor layer containing a monocrystalline 3C—SiC layer by implantation of carbon in silicon on a first silicon substrate and applying an epitaxial layer of nitride compound semiconductor suitable for the generation of optoelectronic components onto the 3C—SiC semiconductor layer structure, wherein the epitaxial layer of nitride semiconductor is transferred onto a second substrate by bonding the nitride layer onto the second substrate surface and mechanically or chemically removing silicon and layers containing SiC, the second substrate being a metal with a reflectivity ≧80% or being substantially transparent.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.