Reduced process sensitivity of electrode-semiconductor rectifiers

US8492837B2 · kind B2 · utility

Assignee

• FAIRCHILD SEMICONDUCTOR CORPORATION · US

Inventors

• Joseph A. Yedinak · Mountain Top, US
• Mark L. Rinehimer · Smethport, US
• Thomas E. Grebs · Smethport, US
• John L. Benjamin · Smethport, US

Key dates

• Filing date: Oct 27, 2011
• Grant date: Jul 23, 2013
• Expiry date: Oct 27, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/60

Abstract

Disclosed are semiconductor devices and methods of making semiconductor devices. An exemplary embodiment comprises a semiconductor layer of a first conductivity type having a first surface, a second surface, and a graded net doping concentration of the first conductivity type within a portion of the semiconductor layer. The graded portion is located adjacent to the top surface of the semiconductor layer, and the graded net doping concentration therein decreasing in value with distance from the top surface of the semiconductor layer. The exemplary device also comprises an electrode disposed at the first surface of the semiconductor layer and adjacent to the graded portion.