Method for producing a silicon substrate having modified surface properties and a silicon substrate of said type

US8492850B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Gerhard Lammel · Lörrach, DE
• Hubert Benzel · Neckartenzlingen, DE
• Matthias Illing · Tübingen, DE
• Franz Laermer · Stuttgart, DE
• Silvia Kronmueller · Schwaikheim, DE
• Paul Farber · Stuttgart, DE
• Simon Armbruster · Wannweil, DE
• Ralf Reichenbach · Eßlingen, DE
• Christoph Schelling · Stuttgart, DE
• Ando Feyh · Palo Alto, US

Key dates

• Filing date: Apr 27, 2007
• Grant date: Jul 23, 2013
• Expiry date: Nov 24, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8264
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.