Semiconductor device including cell region and peripheral region having high breakdown voltage structure
US8492867B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 20, 2011 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Oct 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
A semiconductor device includes a semiconductor substrate and an electric field terminal part. The semiconductor substrate includes a substrate, a drift layer disposed on a surface of the substrate, and a base layer disposed on a surface of the drift layer. The semiconductor substrate is divided into a cell region in which a semiconductor element is disposed and a peripheral region that surrounds the cell region. The base region has a bottom face located on a same plane throughout the cell region and the peripheral region and provides an electric field relaxing layer located in the peripheral region. The electric field terminal part surrounds the cell region and a portion of the electric field relaxing layer and penetrates the electric field relaxing layer from a surface of the electric field relaxing layer to the drift layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.