Transistor with boot shaped source/drain regions

US8497180B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Peter Javorka · Radebeul, DE
• Stephan Kronholz · Dresden, DE
• Matthias Kessler · Dresden, DE
• Roman Boschke · Dresden, DE

Key dates

• Filing date: Aug 5, 2011
• Grant date: Jul 30, 2013
• Expiry date: Oct 9, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

Devices are formed with boot shaped source/drain regions formed by isotropic etching followed by anisotropic etching. Embodiments include forming a gate on a substrate, forming a first spacer on each side of the gate, forming a source/drain region in the substrate on each side of the gate, wherein each source/drain region extends under a first spacer, but is separated therefrom by a portion of the substrate, and has a substantially horizontal bottom surface. Embodiments also include forming each source/drain region by forming a cavity to a first depth adjacent the first spacer and forming a second cavity to a second depth below the first cavity and extending laterally underneath the first spacers.