Patent · US Active

Terminal face contact structure and method of making same

US8497578B2 · kind B2 · utility

0Cited by
3References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 10, 2009
Grant dateJul 30, 2013
Priority date
Expiry dateMay 2, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/10329
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The invention relates to a contact structure (24) and to a method for producing a contact structure for semiconductor substrates (21) or the like, in particular for terminal faces of semiconductor substrates, comprising a base contact part (22) arranged on a terminal face (20) of the semiconductor substrate and at least one connecting contact part (23) arranged on the base contact part, wherein the connecting contact part is formed from a connecting contact material (34) which has a lower melting point than a base contact material of the base contact part.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.