Terminal face contact structure and method of making same
US8497578B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2009 |
| Grant date | Jul 30, 2013 |
| Priority date | — |
| Expiry date | May 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10329
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a contact structure (24) and to a method for producing a contact structure for semiconductor substrates (21) or the like, in particular for terminal faces of semiconductor substrates, comprising a base contact part (22) arranged on a terminal face (20) of the semiconductor substrate and at least one connecting contact part (23) arranged on the base contact part, wherein the connecting contact part is formed from a connecting contact material (34) which has a lower melting point than a base contact material of the base contact part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.