Two-transistor floating-body dynamic memory cell

US8498140B2 · kind B2 · utility

Assignee

• University of Florida Research Foundation, INC. · US

Inventors

• Jerry G. Fossum · Gainesville, US
• Leo Mathew · Austin, US
• Michael A. Sadd · Austin, US
• Vishal P. Trivedi · Chandler, US

Key dates

• Filing date: Oct 1, 2008
• Grant date: Jul 30, 2013
• Expiry date: Sep 28, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

Embodiments relate to a two-transistor (2T) floating-body cell (FBC) for embedded-DRAM applications. Further embodiments pertain to a floating-body/gate cell (FBGC), which yields reduction in power dissipation, in addition to better signal margin, longer data retention, and higher memory density.