Superfine-patterned mask, method for production thereof, and method employing the same for forming superfine-pattern
US8501394B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2009 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Oct 4, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24479
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method for forming a superfine pattern, which can simply produce a superfine pattern with high mass productivity.The method comprises the steps of forming a first convex pattern, on a film to be treated, forming a spacer formed of a silazane-containing resin composition on the side wall of the convexes constituting the first convex pattern, and forming a superfine pattern using as a mask the spacer or a resin layer disposed around the spacer. The spacer is formed by curing an evenly coated resin composition only in its part around the first convex pattern. According to this method for pattern formation, unlike the conventional method, a superfine pattern can be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.