Method for monitoring the removal of polysilicon pseudo gates
US8501500B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2011 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Nov 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a method for monitoring the removal of a polycrystalline silicon dummy gate, comprising the steps of: forming a polycrystalline silicon dummy gate structure on a surface of a wafer; determining a measurement target and an error range of mass of the wafer; and measuring the mass of the wafer by a mass measurement tool after polycrystalline silicon dummy gate removal to determine whether the polycrystalline silicon dummy gate has been completely removed. According to the measurement method of the present invention, the full wafer may be quickly and accurately measured without requiring a specific test structure, to effectively monitor and determine whether the polysilicon dummy gate is thoroughly removed, meanwhile said measurement method gives feedback directly, quickly and accurately without causing any damage to the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.