Method of fabrication of programmable memory microelectric device
US8501525B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 1, 2011 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Aug 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8822
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of fabricating a programmable memory microelectronic device includes depositing onto a first electrode an intermediate layer of a material having a chalcogenide; depositing an ionizable metallic layer on the intermediate layer; irradiating with ultraviolet radiation the ionizable metallic layer so that metallic ions from the ionizable metallic layer diffuse into the intermediate layer to form a chalcogenide material containing metallic ions, and depositing a second electrode on the layer of chalcogenide material containing metallic ions obtained in the prior step. The second and third steps are repeated at least n times, where n is an integer greater than or equal to 1. The ionizable metallic layer deposited during the second step has a sufficiently small thickness that the metallic ions may be diffused totally during the irradiation (third) step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.