Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures formed using such methods
US8501537B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 31, 2011 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Sep 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12042
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of bonding together semiconductor structures include annealing a first metal feature on a first semiconductor structure, bonding the first metal feature to a second metal feature of a second semiconductor structure to form a bonded metal structure that comprises the first metal feature and the second metal feature, and annealing the bonded metal structure. Annealing the first metal feature may comprise subjecting the first metal feature to a pre-bonding thermal budget, and annealing the bonded metal structure may comprise subjecting the bonded metal structure to a post-bonding thermal budget that is less than the pre-bonding thermal budget. Bonded semiconductor structures are fabricated using such methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.