Method for making a semiconductor structure with a buried ground plane
US8501588B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2009 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Aug 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a semiconducting structure, including: a) forming, on a surface of a final semiconductor substrate, a semiconducting layer, doped with elements from columns III and V of the Periodic Table so as to form a ground plane, b) forming a dielectric layer, c) then assembling, by direct adhesion of the source substrate, on the final substrate, the layer forming the ground plane between the final substrate and the source substrate, the dielectric layer being between the source substrate and the ground plane, d) then thinning the source substrate, leaving, on the surface of the semiconductor structure, a film made from a semiconducting material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.